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Light momentum turns pure silicon from
an indirect to a direct bandgap semiconductor
https://phys.org/news/2024-09-momentum-pure-silicon-indirect-bandgap.html

Original Paper
https://arxiv.org/pdf/2304.14521

Photon Momentum-Enabled Light Absorption in Bulk Silicon

Source: Kharintsev, S. S. et al. Photon momentum enabled light absorption in bulk silicon. Science Advances, 10, eadf5997 (2024).

Central Theme: This research demonstrates a novel method to dramatically enhance light absorption in silicon, an indirect bandgap semiconductor, by exploiting the momentum of confined photons. This challenges the traditional reliance on plasmonic or light-trapping mechanisms for improving silicon's optical properties.

Key Findings:

• Photon Momentum as a Driving Force: Confining photons to scales below 3 nm significantly increases their momentum, enabling direct optical transitions in silicon that would otherwise be forbidden due to momentum mismatch. "Photons do not carry sufficient momentum to induce indirect optical transitions in semiconducting materials such as silicon, necessitating the assistance of lattice phonons to conserve momentum… This work introduces an alternative strategy to fulfill the momentum-matching requirement in indirect optical transitions."

• Enhanced Absorption Across Broad Spectrum: This effect substantially increases silicon's absorption coefficient across a wide spectral range, from the UV to the near-IR, effectively transforming it into a direct bandgap semiconductor for the confined photons.

• Experimental Validation: Tip-enhanced Raman scattering (TERS) experiments demonstrate significant heating and melting of silicon AFM tips when placed near 1-2 nm gold structures on a substrate. This is attributed to enhanced absorption due to confined photon momentum. "We observe an inverse relationship between particle size and optical heating, as revealed by both Raman (Figures 3b2-3b5) and phase measurements (Figures 3c1-3c5)."

• Reflectance measurements on s

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